? 2011 ixys corporation, all rights reserved xpt tm 600v genx3 tm w/ diode ixxk100n60c3h1 ixxx100n60c3h1 v ces = 600v i c90 = 100a v ce(sat) 2.20v t fi(typ) = 75ns symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 170 a i lrms terminal current limit 120 a i c90 t c = 90c 100 a i f110 t c = 110c 65 a i cm t c = 25c, 1ms 340 a i a t c = 25c 50 a e as t c = 25c 600 mj ssoa v ge = 15v, t vj = 150c, r g = 2 i cm = 200 a (rbsoa) clamped inductive load @v ce v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 10 , non repetitive p c t c = 25c 695 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g ds100283a(01/11) extreme light punch through igbt for 20-60khz switching symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 50 a t j = 125 c 4 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 70a, v ge = 15v, note 1 1.68 2.20 v t j = 150 c 1.97 v features z optimized for 20-60khz switching z square rbsoa z avalanche rated z short circuit capability z anti-parallel ultra fast diode z high current handling capability advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts preliminary technical information g = gate e = emitter c = collector tab = collector to-264 (ixxk) e g c plus247 (ixxx) g tab tab e c g
ixys reserves the right to change limits, test conditions, and dimensions. ixxk100n60c3h1 ixxx100n60c3h1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 22 40 s c ie s 4810 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 455 pf c res 80 pf q g 150 nc q ge i c = 70a, v ge = 15v, v ce = 0.5 ? v ces 34 nc q gc 60 nc t d(on) 30 ns t ri 70 ns e on 2.00 mj t d(off) 90 ns t fi 75 ns e of f 0.95 1.40 mj t d(on) 30 ns t ri 65 ns e on 3.00 mj t d(off) 105 ns t fi 115 ns e off 1.40 mj r thjc 0.18 c/w r thcs 0.15 c/w notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 70a, v ge = 15v v ce = 360v, r g = 2 note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 60a, v ge = 0v, note 1 1.6 2.0 v t j = 150 c 1.4 1.8 v i rm 8.3 a t rr 140 ns r thjc 0.30 c /w i f = 60a, v ge = 0v, t j = 100 c -d i f /dt = 200a/ s , v r = 300v inductive load, t j = 25c i c = 70a, v ge = 15v v ce = 360v, r g = 2 note 2 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-264 outline terminals: 1 = gate 2,4 = collector 3 = emitter terminals: 1 - gate 2 - collector 3 - emitter plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190
? 2011 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 9v 11v 7v 6v 8v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 10v 11v 13v 12v 8v 7v 9v 14v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 8v 9v 7v 6v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 70a i c = 35a i c = 140a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 140 a t j = 25oc 70 a 35 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc ixxk100n60c3h1 ixxx100n60c3h1
ixys reserves the right to change limits, test conditions, and dimensions. ixxk100n60c3h1 ixxx100n60c3h1 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 180 200 220 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20406080100120140 q g - nanocoulombs v ge - volts v ce = 300v i c = 70a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limit dc 100s
? 2011 ixys corporation, all rights reserved fig. 13. inductive switching energy loss vs. gate resistance 0.5 1.0 1.5 2.0 2.5 3.0 23456789101112131415 r g - ohms e off - millijoules 2 3 4 5 6 7 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 360v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 80 100 120 140 160 180 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f i - nanoseconds 80 100 120 140 160 180 200 220 240 260 280 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 0 0.5 1 1.5 2 2.5 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 1 2 3 4 5 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 360v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 50 75 100 125 150 175 200 20 30 40 50 60 70 80 90 100 i c - amperes t f i - nanoseconds 60 80 100 120 140 160 180 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 60 70 80 90 100 110 120 130 140 150 160 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 60 80 100 120 140 160 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 360v i c = 100a i c = 50a ixxk100n60c3h1 ixxx100n60c3h1
ixys reserves the right to change limits, test conditions, and dimensions. ixxk100n60c3h1 ixxx100n60c3h1 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 20 30 40 50 60 70 80 90 100 i c - amperes t r i - nanoseconds 24 26 28 30 32 34 36 38 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 360v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 27 28 29 30 31 32 33 34 35 36 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 360v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 23456789101112131415 r g - ohms t r i - nanoseconds 20 28 36 44 52 60 68 76 84 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 50a i c = 100a
? 2011 ixys corporation, all rights reserved ixys ref: ixx_100n60c3(7d)9-30-10-a fig. 26 maximum transient thermal impedance junction to case (for diode) 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width [ms] z(th)jc - [ oc / w ] fig. 22. forward current i f versus v f fig. 23. reverse recovery charge q r versus -di f /dt fig. 24. peak reverse current i rm versus -di f /dt fig. 25. dynamic parameters q r , i rm versus t vj fig. 26. recovery time t rr versus -di f /dt 27. seconds ixxk100n60c3h1 ixxx100n60c3h1
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